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| SCG015 Product Features * 1800 - 2500 MHz * +24 dBm P1dB * +40 dBm OIP3 * 15 dB Gain * 5 dB Noise Figure * Single Positive Supply (+8V) * Available in a lead-free / green SOT-89 Package Style The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier Product Description The SCG015 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve performance over a broad range with +41 dBm OIP3 and +24 dBm of compressed 1dB power and is housed in a lead-free/green/RoHS-compliant SOT-89 SMT package. All devices are 100% RF and DC tested. The product is targeted for use as a gain block/driver amplifier for various current and next generation wireless technologies such as CDMA, CDMA2000, and W-CDMA, where high linearity and medium power is required. In addition, the SCG015 will work for numerous other applications within the 1800 to 2500 MHz frequency range. Functional Diagram GND 4 1 RF IN 2 GND 3 RF OUT Applications * * * * * Mobile Infrastructure W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Pin No. 1 3 2, 4 Function Input Output/Bias Ground Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure Device Voltage Device Current Typical Performance (1) Min 1800 13.5 16 +23 +37.5 2140 15 20 10 +24 +40 5 5 100 Units MHz MHz dB dB dB dBm dBm dB V mA Typ Max 2500 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 (2) Noise Figure Units MHz dB dB dB dBm dBm dB 1900 16.5 -16 -11 +24 +40 5 Typical 2140 15 -20 -10 +24 +40 5 2450 14.5 -12 -9 +23 +40 5 85 135 1. Test conditions unless otherwise noted: 25C, Vsupply = +8 V, in tuned application circuit with Rbias = 30 . 2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Device Current RF Input Power (continuous) Junction Temperature -40 to +85 C -55 to +150 C 180 mA +15 dBm +250 C Rating Ordering Information Part No. SCG015B-G Description 0.2 Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOT-89 Pkg) SCG015B-PCB1960 1960 MHz Fully Assembled Eval. Board SCG015B-PCB2140 2140 MHz Fully Assembled Eval. Board Specifications and information are subject to change without notice Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 5 October 2006 SCG015 30 The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier S-parameters (Vdevice = +5V, Icc = 100 mA, 25 C, unmatched 50 ohm system) Swp Max 2.50123GHz 2. 0 Typical Device Data S11 1.0 0.8 1.0 0 3. 2. 0 DB(|S[2,1]|) 25 Gain (dB) DB(GMax) 0. 4 6 0. 6 0. 0.8 Gain / Maximum Stable Gain S22 Swp Max 2.50123GHz 0 4. 5.0 0.2 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 20 0 0 15 -0.8 -0.8 1.8 1.9 2 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 1800 - 2500 MHz, with markers placed at 1.8 - 2.5 GHz in 0.05 GHz increments. S-Parameters (Vdevice = +5 V, Icc = 100 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 1800 1900 2000 2100 2200 2300 2400 2500 -6.70 -7.55 -8.60 -9.85 -11.07 -11.69 -10.87 -9.15 80.76 68.30 53.47 35.06 10.07 -21.71 -56.13 -86.03 15.90 15.77 15.66 15.53 15.40 15.08 14.67 14.14 24.47 16.51 7.76 -1.19 -10.90 -20.90 -31.83 -43.53 -28.55 -28.96 -30.14 -31.49 -33.04 -36.28 -40.69 -42.21 -25.74 -32.29 -38.84 -45.79 -59.63 -78.21 -106.46 163.73 -5.34 -4.96 -4.56 -4.12 -3.67 -3.20 -2.80 -2.44 -1.0 -1.0 2.1 2.2 Frequency (GHz) 2.3 2.4 2.5 -0 .6 -0 .6 .0 -2 .0 -2 10 .4 -0 .4 -0 Swp Min 1.79083GHz Swp Min 1.79083GHz 156.39 156.21 155.58 155.07 153.49 150.85 147.22 142.35 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 5 October 2006 -4 .0 -5. 0 -3 .0 -4 .0 -5. 0 2 -0. -0. 2 -10.0 0. 4 0 3. 0 4. 5.0 -10.0 -3 .0 0.2 10.0 SCG015 Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 (+9 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier 1960 MHz Application Circuit (SCG015B-PCB1960) Typical RF Performance at 25C 1960 MHz 16.5 dB -16 dB -11 dB +24 dBm +40 dBm +17 dBm 5 dB +5 V 100 mA RES ID=R4 R=22 Ohm DIODE1 ID=D1 +8 V RES ID=R1 R=30 Ohm CAP ID=C3 C=.1uF 8.2 v The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. RES ID=R3 R=220 Ohm RES ID=R2 R=390 Ohm CAP ID=C2 C=1000 pF PORT P=1 Z=50 Ohm CAP ID=C6 C=56 pF IND ID=L2 L=15 nH IND ID=L1 L=15 nH SUBCKT NET="SCG015" CAP ID=C1 C=56 pF PORT P=2 Z=50 Ohm Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) CAP ID=C4 C=56 pF Noise Figure Device Voltage Quiescent Current Please see note 2 on page 1. IND ID=L3 L=3.3 nH CAP ID=C7 C=1.2 pF CAP ID=C8 C=1.2 pF CAP ID=C5 C=56 pF C7 placed at silkscreen marker `A" or center of component placed at 3.9 deg. @ 1900 MHz away from pin 1. C8 is placed at silkscreen marker `7" or center of component placed at 32 deg. @ 1.9 GHz away from pin 3. Ssg, OIP3 & P1dB vs. Temperature @ 1.96GHz 26 24 22 20 18 16 14 12 10 -40 -15 10 35 60 85 Gain P1dB OIP3 44 43 42 41 40 39 38 37 36 -65 -40 -45 ACPR1 vs. Pout vs. Temperature at 1.96GHz Gain P1dB OIP3 (dBm) -50 dBc -55 -60 85C -70 11 13 15 17 -40C 25C Temperature (C) Pout (dBm) 2140 MHz Application Circuit (SCG015B-PCB2140) Typical RF Performance at 25C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 (+9 dBm / tone, 1 MHz spacing) DIODE1 ID=D1 +8 V RES ID=R1 R=30 Ohm CAP ID=C3 C=.1uF 2140 MHz 15 dB -20 dB -10 dB +24 dBm +40 dBm 5 dB +5 V 100 mA 8.2 v The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. RES ID=R3 R=220 Ohm RES ID=R2 R=390 Ohm CAP ID=C2 C=1000 pF PORT P=1 Z=50 Ohm CAP ID=C6 C=56 pF IND ID=L2 L=15 nH IND ID=L1 L=15 nH SUBCKT NET="SCG015" CAP ID=C1 C=56 pF PORT P=2 Z=50 Ohm Noise Figure Device Voltage Quiescent Current Please see note 2 on page 1. CAP ID=C4 C=56 pF RES ID=R4 R=22 Ohm IND ID=L3 L=3.3 nH CAP ID=C7 C=.7 pF CAP ID=C8 C=1 pF CAP ID=C5 C=56 pF C7 placed at silkscreen marker `A" or center of component placed at 4.4 deg. @ 2.14 GHz away from pin 1. C8 is placed at silkscreen marker `7" or center of component placed at 37 deg. @ 2.14 GHz away from pin 3. Ssg, OIP3, & P1dB vs. Temperature @ 2.14GHz 24 22 42 41 40 39 38 37 Ssg 12 -40 -15 10 P1dB 35 OIP3 36 60 85 Ssg & P1dB 20 18 16 14 Temperature (C) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 5 October 2006 OIP3 (dBm) SCG015 Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 (+9 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier 2450 MHz Reference Design Typical RF Performance at 25C 2450 MHz 14.5 dB -12 dB -9 dB +23 dBm +40 dBm 5 dB +5 V 100 mA DIODE1 ID=D1 +8 V RES ID=R1 R=30 Ohm CAP ID=C3 C=.1uF 8.2 v The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. RES ID=R3 R=220 Ohm RES ID=R2 R=390 Ohm CAP ID=C2 C=1000 pF PORT P=1 Z=50 Ohm CAP ID=C6 C=56 pF IND ID=L2 L=15 nH IND ID=L1 L=15 nH SUBCKT NET="SCG015" CAP ID=C1 C=56 pF PORT P=2 Z=50 Ohm Noise Figure Device Voltage Quiescent Current Please see note 2 on page 1. CAP ID=C4 C=56 pF RES ID=R4 R=22 Ohm RES ID=L3 R=0 Ohm CAP ID=C8 C=1 pF CAP ID=C5 C=56 pF C8 is placed half way between silkscreen marker `3' and `4' or center of component placed at 23 deg. @ 2.45 GHz away from pin 3. Ssg, OIP3 and P1dB vs. Temperature at 2.45GHz 26 24 44 43 42 41 40 Ssg 16 14 -40 P1dB OIP3 39 38 -15 10 35 60 85 Ssg & P1db 22 20 18 Temperature (C) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 5 October 2006 OIP3 (dBm) SCG015 The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier SCG015B-G Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260C reflow temperature) and leaded (maximum 245C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The component will be marked with an "S015G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information Land Pattern ESD Rating: Class 1B Value: Passes at between 500 and 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) MTTF vs. GND Tab Temperature 100000 Rating -40 to +85 C 128 C / W 149 C 10000 Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. 2. This corresponds to the typical biasing condition of +5V, 100 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. Tjc = Tcase + Rth * Vde * Icc 1000 100 60 70 80 90 100 110 120 Tab Temperature (C) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 5 October 2006 |
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